UID/FIS/04559/2013
Ground-state Landé <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML"><mi>g</mi></math></span> factors for selected ions along the boron isoelectronic sequence
| Title | Ground-state Landé <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML"><mi>g</mi></math></span> factors for selected ions along the boron isoelectronic sequence |
| Publication Type | Journal Article |
| Year of Publication | 2016 |
| Authors | Marques, J. P., Indelicato P., Parente F., Sampaio J. M., and Santos J. P. |
| Journal | Physical Review A |
| Volume | 94 |
| Pagination | 042504 |
| Date Published | Oct 04 |
| Accession Number | 19B5DED7-4CD3-49DA-8C6D-3FDC8B39E95E |
| Abstract | Land\'e $g$ factors for the fine-structure $1{s}^{2}2{s}^{2}2p\phantom{\rule{0.16em}{0ex}}^{2}P_{1/2}$ and $^{2}P_{3/2}$ levels in the boron isoelectronic sequence for selected $Z$ values have been calculated using the multiconfiguration Dirac-Fock method with both quantum-electrodynamic and electronic correlation corrections included. All-order Breit and vacuum polarization corrections were included in the calculation, with a fully optimized active set wave function. The results are compared with the available theoretical data, showing a very good agreement. |
| URL | http://link.aps.org/doi/10.1103/PhysRevA.94.042504 |
| Short Title | JPS_Articles |
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