Ground-state Landé <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML"><mi>g</mi></math></span> factors for selected ions along the boron isoelectronic sequence

TitleGround-state Landé <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML"><mi>g</mi></math></span> factors for selected ions along the boron isoelectronic sequence
Publication TypeJournal Article
Year of Publication2016
AuthorsMarques, J. P., Indelicato P., Parente F., Sampaio J. M., and Santos J. P.
JournalPhysical Review A
Volume94
Pagination042504
Date PublishedOct 04
Accession Number19B5DED7-4CD3-49DA-8C6D-3FDC8B39E95E
AbstractLand\'e $g$ factors for the fine-structure $1{s}^{2}2{s}^{2}2p\phantom{\rule{0.16em}{0ex}}^{2}P_{1/2}$ and $^{2}P_{3/2}$ levels in the boron isoelectronic sequence for selected $Z$ values have been calculated using the multiconfiguration Dirac-Fock method with both quantum-electrodynamic and electronic correlation corrections included. All-order Breit and vacuum polarization corrections were included in the calculation, with a fully optimized active set wave function. The results are compared with the available theoretical data, showing a very good agreement.
URLhttp://link.aps.org/doi/10.1103/PhysRevA.94.042504
Short TitleJPS_Articles